Large-area 2D selective area growth for photonic crystal surface emitting lasers

We report an investigation into large-area selective area growth of InGaAs/GaAs quantum wells by metalorganic vapour phase epitaxy. The emission wavelength tuning range, enhancement, and uniformity material deposited within square masked regions with central windows widths in the range 100–300 μm are studied. Micro-photoluminescence measurements at centre point each reveals a total 86 nm across all samples, typical 30 for given window width, dependent upon dielectric mask width. thickness enhancement features, as determined white-light interferometric profiling, indicates that rate enhancements between 1.19 2.23× achieved respect to nominal epitaxial structure. By comparing observed wavelengths those simulated using enhanced well thicknesses, indium concentrations 12 17 % is calculated feature. Two-dimensional analysis selected features areas uniform up 100 × μm2 size can be patterns used, indicating suitability future applications fabrication monolithically integrated multi-wavelength photonic crystal surface emitting laser arrays.